Mott-Schottky measurement
Mn2[TTF]x[NiS4]1-x FTO working electrodes · Electrode
CHI660E workstation in 0.1 M Na2SO4 aqueous solution; three-electrode system with Pt counter and Ag/AgCl reference; frequencies 500, 750, 1000 Hz.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| semiconductor type after further increasing NiS4 concentration | n-type maintained | — | — | Text Qualitative | 4 · Results and Discussion |
| flat-band potential of Mn2[TTF]0.49[NiS4]0.51 | -0.62 V vs Ag/AgCl | — | — | Text Exact Reported | 4 · Results and Discussion · Figure 3c |
| semiconductor type of Mn2[TTF]0.49[NiS4]0.51 | n-type | — | — | Text Qualitative | 4 · Results and Discussion · Figure 3c |
| flat-band potential of Mn2[TTF]0.78[NiS4]0.22 | +0.34 V vs Ag/AgCl | — | — | Figure Axis Approximate | 4 · Figure 3 · Figure 3b |
| semiconductor type of Mn2[TTF]0.78[NiS4]0.22 | p-type-like | — | — | Text Qualitative | 4 · Results and Discussion · Figure 3b |
| flat-band potential of Mn2[TTF] | 0.01 V vs Ag/AgCl | — | — | Text Exact Reported | 4 · Results and Discussion · Figure 3a |
| semiconductor type of Mn2[TTF] from Mott-Schottky | p-type | — | — | Text Qualitative | 4 · Results and Discussion · Figure 3a |