Sensing Application — Redox-Active Mixed-Linker Metal–Organic Frameworks with Switchable Semiconductive Characteristics for Tailorable Chemiresistive Sensing

Measurement evidence

Sensing Application

Redox-Active Mixed-Linker Metal–Organic Frameworks with Switchable Semiconductive Characteristics for Tailorable Chemiresistive Sensing · Zhou X.-C., Liu C., Su J. et al. · Angewandte Chemie - International Edition · 2023 · e202211850

4 measurement groups · 19 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Relative-humidity response/resistance tests

Mn2[TTF]x[NiS4]1-x chemiresistive thin-film devices · Thin Film

Water vapour response-recovery tests at different RH levels; RH resistance defined as highest RH level that first caused SNR > 3.

Temperature
room temperature
Atmosphere
humidified N2 / simulated exhaled mixture in Figure S32
Geometry
thin-film chemiresistive device
Context
supported pristine MOF thin-film device
Measurement source
6 · Results and Discussion · Figures S27-S32
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
RH resistance at high NiS4 fractionMarked as a best value within this paper80 % RHText
Rounded Reported
6 · Results and Discussion · Figure 4f
RH resistance at low NiS4 fraction60 % RHText
Rounded Reported
6 · Results and Discussion · Figure 4f
Mn2[TTF] response to 50 % RH0.0435 %Text
Exact Reported
6 · Results and Discussion

Repeated acetone sensing cycling

Mn2[TTF]x[NiS4]1-x chemiresistive thin-film devices · Thin Film

Mn2[TTF]0.49[NiS4]0.51 device exposed to 200 ppm acetone for ten repeated cycles.

Temperature
room temperature
Atmosphere
dry N2 carrier
Geometry
thin-film chemiresistive device
Context
supported pristine MOF thin-film device
Measurement source
6 · Results and Discussion · Figure 4e; Figures S24-S26
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
coefficient of variation over ten 200 ppm acetone cyclesMarked as a best value within this paper0.78 %Text
Exact Reported
6 · Results and Discussion · Figure 4e

Chemiresistive I-t acetone vapour sensing

Mn2[TTF]x[NiS4]1-x chemiresistive thin-film devices · Thin Film

Dry N2 carrier gas, acetone vapour diluted to target concentrations, room temperature, source-drain voltage 2 V.

Temperature
room temperature
Atmosphere
dry N2 carrier unless otherwise noted
Geometry
Si/SiO2 Ti/Au source-drain electrodes with drop-cast MOF and PDMS chamber
Context
supported pristine MOF thin-film device
Measurement source
5 · Results and Discussion · Figure 4c; Figure S23
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Mn2[NiS4] recovery time after 200 ppm acetone22.4 sSI Table
Exact Reported
30 · Table S5 · Table S5
Mn2[NiS4] response time to 200 ppm acetone28.7 sSI Table
Exact Reported
30 · Table S5 · Table S5
Mn2[TTF] SNR to 20 ppm acetone19.48Text
Exact Reported
5 · Results and Discussion · Figure 4f
Mn2[TTF]0.78[NiS4]0.22 SNR to 20 ppm acetoneMarked as a best value within this paper31.36Text
Exact Reported
5 · Results and Discussion · Figure 4f
Mn2[TTF] response to 20 ppm acetone6.785 %Text
Exact Reported
6 · Results and Discussion

Chemiresistive I-t ethanol vapour sensing

Mn2[TTF]x[NiS4]1-x chemiresistive thin-film devices · Thin Film

Dry N2 carrier gas, ethanol vapour diluted to target concentrations, room temperature, source-drain voltage 2 V; SMU Agilent 2902a.

Temperature
room temperature
Atmosphere
dry N2 carrier unless otherwise noted
Geometry
Si/SiO2 Ti/Au source-drain electrodes with drop-cast MOF and PDMS chamber
Context
supported pristine MOF thin-film device
Measurement source
5 · Sensing measurement · Figure 4; Tables S5-S6
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Mn2[NiS4] recovery time after 50 ppm ethanol23.4 sSI Table
Exact Reported
30 · Table S5 · Table S5
Mn2[NiS4] relative conductance response to 100 ppm ethanolMarked as a best value within this paper3481.1 %SI Table
Exact Reported
31 · Table S6 · Table S6
Mn2[NiS4] response time to 50 ppm ethanol32.3 sSI Table
Exact Reported
30 · Table S5 · Table S5
composition with lowest theoretical LODsMarked as a best value within this paperMn2[TTF]0.78[NiS4]0.22Text
Qualitative
5 · Results and Discussion · Figure 4f
VOC response sign for n-type memberspositive response for Mn2[TTF]0.49[NiS4]0.51, Mn2[TTF]0.24[NiS4]0.76, and Mn2[NiS4]Text
Qualitative
5 · Results and Discussion · Figure 4
VOC response sign for p-type membersnegative response for Mn2[TTF] and Mn2[TTF]0.78[NiS4]0.22Text
Qualitative
5 · Results and Discussion · Figure 4
Mn2[NiS4] sensor powerMarked as a best value within this paper0.0153 nWText
Exact Reported
5 · Results and Discussion · Figure 4f
Mn2[TTF] SNR to 5 ppm ethanol14.29Text
Exact Reported
5 · Results and Discussion · Figure 4f
Mn2[TTF]0.78[NiS4]0.22 SNR to 5 ppm ethanolMarked as a best value within this paper29.91Text
Exact Reported
5 · Results and Discussion · Figure 4f
Mn2[TTF] response to 5 ppm ethanol3.343 %Text
Exact Reported
6 · Results and Discussion