UV-visible truncation method and UPS with He I source
Cu-BHT thin film on ultra-white glass substrate · Thin Film
Band gap from absorption truncation; work function from secondary electron cutoff; valence-band edge from UPS.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Ag work function used for band alignment | 4.26 eV | 4.26 eV | — | Text Exact Reported | p004 / 4 · Results and discussion · Fig. 2e |
| Optical band gap | about 2.14 eV | 2.14 eV | — | Text Approximate | p004 / 4 · Results and discussion · Fig. S5a |
| Valence-band maximum to Fermi-level energy difference | 1.50 eV | 1.5 eV | — | Text Exact Reported | p004 / 4 · Results and discussion · Fig. S5c |
| Semiconductor type | n-type semiconductor properties | — | — | Text Qualitative | p004 / 4 · Results and discussion · Fig. 2d |
| Work function | 4.62 eV | 4.62 eV | — | Text Exact Reported | p004 / 4 · Results and discussion · Fig. S5b |