Interface-assisted preparation of conductive MOF membrane/films

9review sections

6material families

12review claims

16secondary benchmarks

26cited studies

4research gaps

Review scope

Reviews interface-assisted preparation of conductive MOF membrane and thin films, covering gas-liquid, liquid-liquid, liquid-solid and steam-assisted routes, growth-mechanism probes, device applications and remaining scale-up and universality challenges.

Coverage: 2007–2025
Category: Review Thin Film Device
Material scope: conductive metal-organic frameworks · C-MOF thin films and membranes · 2D pi-conjugated MOFs based on BHT, HHTP, HITP, THT and related ligands · surface-grown MOF films and SURMOF-like mechanistic examples · C-MOF films for electronic, sensing, optoelectronic, energy and catalytic devices
Transport scope: intrinsic electronic conductivity · pi-conjugation and pi-pi stacking pathways · field-effect transport · chemiresistive transduction · electrochemical charge transfer · thermoelectric transport

Application scope: field-effect transistors · chemiresistive gas sensors · optoelectronic devices · electrochemical sensors · capacitors and supercapacitors · spin valves · thermoelectric devices · electrocatalysis and photocatalysis
Explicit exclusions: primary recipe extraction · bulk MOFs without film or membrane relevance · exhaustive bibliography transcription · uncited numerical leaderboard use
Source: 8984 · Abstract
Evidence role: Context, taxonomy and secondary benchmarking

Section map

The review’s argument is preserved as a navigable set of section summaries.

4. Applications

8996-9001

Surveys device uses of interface-grown C-MOF films in FETs, gas sensors, photodetectors, OLEDs, electrochemical sensors, supercapacitors, spin valves, thermoelectrics and catalysis.

Relevance: Core · 8996 · 4. Applications

2.2. Gas-liquid interface

8989-8991

Covers air/water or Langmuir-Blodgett-assisted routes for monolayers, nanosheets and ultra-smooth films, including transferred Ni-HITP and oriented Cu-HHTP films.

Relevance: Core · 8989 · 2.2. Gas-liquid interface · Figure 7

2. MOF films prepared using an interface-assisted method

8986-8993

Explains interfacial growth as reaction at incompatible-phase boundaries and organises preparation into liquid-liquid, gas-liquid, liquid-solid and steam-assisted routes.

Relevance: Core · 8987 · 2. MOF films prepared using an interface-assisted method · Figure 2

1. Introduction

8984-8986

Defines MOFs and C-MOFs, motivates film preparation for device integration, compares film preparation methods and positions interface-assisted preparation as the review focus.

Relevance: Core · 8986 · 1. Introduction · Table 1

2.1. Liquid-liquid interface

8987-8989

Reviews free-standing films and membranes formed at water-organic or related liquid-liquid interfaces, including BHT/HTB, HHTP and THT based C-MOF examples.

Relevance: Core · 8987 · 2.1. Liquid-liquid interface · Figures 3-6

2.3. Liquid-solid interface

8991-8992

Frames liquid-solid growth as a way to avoid transfer damage by growing C-MOF films directly on target substrates using LBL-LPE, spray LBL, immersion and capillary methods.

Relevance: Core · 8991 · 2.3. Liquid-solid interface · Figures 11-12

3. Investigation into the mechanisms of C-MOF thin film fabrication via interface-assisted techniques

8993-8996

Reviews in situ and ex situ tools used to study film nucleation, oriented growth, layer-by-layer kinetics, surface effects and concentration-dependent morphologies.

Relevance: Core · 8993 · 3. Investigation into the mechanisms

5. Summary and outlook

9002

States four major challenges: limited universality, insufficient mechanistic understanding, scale-up from cm2 to square metres and interdisciplinary device integration.

Relevance: Core · 9002 · 5. Summary and outlook

2.4. Steam-assisted conversion method

8992-8993

Describes solution-solid and vapour-assisted conversion methods for continuous crystalline Ni-HHTP/Ni-HITP films with thickness control and potential low-cost scale-up.

Relevance: Supporting · 8993 · 2.4. Steam-assisted conversion method · Figure 13

Taxonomies

Classification systems are attributed to this review and are not treated as a global material registry.

Device Function Enabled By Conductive Thin FilmsAuthor-proposed

C-MOF thin-film device application classes

Section 4 organises applications by device class, linking film fabrication to charge transfer, contact resistance, analyte access, optical response or energy conversion.

Categories: field-effect transistors · chemiresistive sensors · optoelectronic devices · electrochemical sensors · capacitors · spin valves · thermoelectric devices · catalysts

8996 · 4. Applications

Film Quality, Crystallinity And Preparation ConditionsAuthor-proposed

C-MOF film preparation method comparison

Table 1 contrasts interface-assisted synthesis with ERA and CVD, presenting interface-assisted growth as thin-film, oriented and room-temperature/pressure compatible.

Categories: interface-assisted method · exfoliation and recombination · chemical vapour deposition

8986 · 1. Introduction · Table 1

Characterisation Method For Nucleation And GrowthAuthor-proposed

Mechanistic probe taxonomy for film growth

The mechanism section groups studies by tools able to monitor orientation, mass uptake, surface morphology, microstructure or chemical state during film growth.

Categories: grazing incident XRD · quartz crystal microbalance · AFM · SEM · spectroscopy

8993 · 3. Investigation into the mechanisms

Interface At Which Nucleation And Film Growth OccurAuthor-proposed

Interface-assisted C-MOF film route taxonomy

The review's main organisational taxonomy classifies conductive MOF film preparation by the interface that confines reagent diffusion and templates growth.

Categories: gas-liquid interface · liquid-liquid interface · liquid-solid interface · steam-assisted or vapour-assisted conversion

8987 · 2. MOF films prepared using an interface-assisted method · Figure 2

Material families

Review-defined families retain their representative materials and conduction descriptions.

BHT/HTB conductive MOF films

2D Layered Or Nanosheet Conductive Framework

Sulfur-rich benzenehexathiol or related HTB/BHT frameworks prepared as interfacial films or membranes.

Conduction: The review uses BHT/HTB films to illustrate high conductivity, metallic lustre, bipolar transport and interfacial asymmetry in electrochemical sensing.

Representative materials: Ni-BHT · Pd-BHT · Cu-HTB · Ag-HTB · Au-HTB · Cu-BHT

Nodes / linkers: Ni · Pd · Cu · Ag · Au · benzenehexathiol · thiol-rich aromatic ligands

8987 · 2.1. Liquid-liquid interface · Figures 3-4

Triphenylene HHTP/HITP conductive MOF films

2D Pi-Conjugated Layered Films

Planar triphenylene-derived conductive MOFs based on HHTP, HITP or HATP/HITP chemistry.

Conduction: Triphenylene C-MOF films provide charge-transfer channels for FETs, gas sensing, supercapacitors, spin valves and thermoelectrics.

Representative materials: Cu-HHTP · Ni-HITP · Ni3(HITP)2 · Ni3(HHTP)2 · Co-HHTP

Nodes / linkers: Cu · Ni · Co · hexahydroxytriphenylene · hexaaminotriphenylene · hexaiminotriphenylene

8989 · 2.2. Gas-liquid interface · Figures 6-7

C-MOF hybrid photocatalyst membranes

Ultrathin Film Or Multilayer Membrane

C-MOF ultrathin films loaded or integrated with molecular catalysts and photosensitisers for CO2 reduction.

Conduction: Conductive and porous films combine electrical pathways, catalytic centres and photosensitiser access for electro- or photocatalytic CO2 reduction.

Representative materials: [DMC@Cu-HHTP]-PVK · [DMC@cMOF]-PVK · Re-MOF films

Nodes / linkers: Cu · Re · Co · HHTP · covalent metal-organic framework channels · rhenium complex linkers

9001 · 4.4.5. Catalyst · Figure 24

Surface-grown carboxylate MOF films for mechanism studies

Surface-Mounted 3D Or Oriented Thin Films

Cu-BTC and fluorinated BDC/dabco surface-mounted MOF films used to understand LBL growth kinetics and surface-directed orientation.

Conduction: These films are not the main high-conductivity family but provide growth-mechanism evidence for nucleation, orientation, roughness and thickness control.

Representative materials: Cu-BTC · Cu2(F4bdc)2(dabco) · MOF-399 · MOF-14

Nodes / linkers: Cu · benzene tricarboxylate · tetrafluorobenzene dicarboxylate · dabco · carboxylate linkers

8993 · 3. Investigation into the mechanisms · Figure 14

Porphyrinic Cu-TCPP C-MOF films

2D Wafer-Level Films

Two-dimensional porphyrinic C-MOF films grown on dielectric substrates by capillary or liquid-solid methods.

Conduction: Reviewed as a comparatively conductive carboxylate-based MOF film with conductivity far above conventional carboxylic-acid MOFs.

Representative materials: Cu-TCPP

Nodes / linkers: Cu · TCPP porphyrin ligands

8992 · 2.3. Liquid-solid interface · Figure 12

THT and related sulfur-rich conductive MOFs

2D Honeycomb Or Monolayer-Like Films

Conductive frameworks assembled from thiophene or trithiolate-rich ligands, used as model systems for photoconductive and ultrafast charge-transport studies.

Conduction: The review highlights honeycomb pores, ordered stacking and terahertz probes for charge transport in Fe3(THT)2 films.

Representative materials: Fe3(THT)2(NH4)3 · Ni-THT · Ni-di(thiophene)

Nodes / linkers: Fe · Ni · THT · thiophene-containing ligands

8989 · 2.1. Liquid-liquid interface · Figure 5

Synthesis strategies

Review-level synthesis principles remain separate from primary-study recipes.

Gas-liquid and Langmuir-Blodgett-assisted growth

Ligands or nanoparticles are confined at an air/water or gas/water interface, where lateral packing and surface pressure can promote monolayer or ultrathin film formation.

Claimed effects: Enables large-area, smooth and dense monolayer or few-layer C-MOF films suitable for transfer and FET/device testing.

Controlling variables: surface pressure · water-surface confinement · ligand packing · temperature · transfer conditions

Representative materials: Ni-THT · Ni-HITP · Cu-HHTP

Caveat: Transfer from gas-liquid or liquid-liquid interfaces can damage samples and add contact resistance, motivating liquid-solid methods.

8990 · 2.2. Gas-liquid interface · Figure 7

Liquid-liquid interfacial self-assembly

Metal salts and ligands are placed in immiscible liquid phases so diffusion and reaction at the boundary form free-standing or transferable films.

Claimed effects: Produces continuous films or membranes with controllable morphology and, for some BHT/HTB systems, high conductivity and field-effect mobility.

Controlling variables: choice of immiscible phases · metal precursor and ligand solubility · interfacial diffusion rate · redox additives or counterions · reaction time

Representative materials: Ni-BHT · Cu-HTB · Fe3(THT)2(NH4)3 · Cu-HHTP

Caveat: The review mostly treats these as successful examples; it does not establish universality beyond planar conjugated ligands.

8987 · 2.1. Liquid-liquid interface · Figures 3-6

Liquid-solid layer-by-layer liquid-phase epitaxy

Functionalised substrates are alternately exposed to metal and ligand solutions so film growth occurs directly on the device-relevant solid surface.

Claimed effects: Allows direct on-substrate growth, thickness control, orientation selection and reduced transfer-induced contact resistance.

Controlling variables: substrate functional groups · number of LBL cycles · spray or immersion sequence · solvent · concentration · temperature

Representative materials: Cu-HHTP · Cu3(HHTP)2 · Cu-TCPP

Caveat: Growth cycles improve control but can still be sensitive to substrate chemistry and crystallographic orientation.

8991 · 2.3. Liquid-solid interface · Figure 11

Organic-liquid-gallium surface synthesis under CVD

A liquid gallium substrate supports ordered layer-by-layer CVD growth, using strong organic ligand-gallium adhesion to control reactions and deposition.

Claimed effects: Produces smoother, lower-contact-resistance 2D C-MOF films than conventional CVD and shows universality across several C-MOF films.

Controlling variables: liquid gallium surface · CVD reaction sequence · ligand-metal adhesion · layer-by-layer cycles · substrate transfer

Representative materials: Cu-BHT · 2D C-MOF films

Caveat: This is presented as an upgraded interface-based CVD strategy rather than the central solution-interface route.

8991 · 2.2. Gas-liquid interface · Figure 9

Steam-assisted and vapour-assisted conversion

A solid or deposited precursor is converted to a conductive MOF film through confined solvent vapour or alkaline vapour exposure.

Claimed effects: Can form continuous crystalline Ni-HHTP/Ni-HITP films with thickness control and potential low-cost large-area preparation.

Controlling variables: vapour source · temperature · precursor amount · substrate confinement · solvent boiling point

Representative materials: Ni-HHTP · Ni-HITP

Caveat: The review notes that the basic vapour source choice is important and not every amine source supports film growth.

8993 · 2.4. Steam-assisted conversion method · Figure 13

Mechanism-led surface-directed LBL growth

Mechanistic studies use functionalised substrates and in situ monitoring to understand nucleation, orientation, thickness evolution and roughness during MOF film growth.

Claimed effects: Provides evidence that organic surface chemistry can nucleate growth, set orientation and tune rate and morphology.

Controlling variables: surface terminal group · temperature · reactant concentration · immersion cycle number · real-time mass or spectroscopic signal

Representative materials: Cu-BTC · Cu2(F4bdc)2(dabco) · Cu-HHTP-xC

Caveat: Much of the mechanistic literature uses SURMOF or non-C-MOF model systems, so transfer to conductive MOF film growth should be made cautiously.

8994 · 3. Investigation into the mechanisms · Figure 14

Review claims

These are the review authors’ synthesis, not newly measured results.

Consensus SummaryHigh supportStructure Property Link

C-MOF conductivity is framed as arising from large pi-conjugated ligands, delocalised electrons, stacked layer/chain structures, guest modulation, ligand engineering and redox-active metal-node selection.

Evidence basis: multi_reference

Caveat: The review gives conceptual mechanisms rather than comparing primary datasets under harmonised measurement conditions.

8985 · 1. Introduction

DescriptiveMedium supportStructure Property Link

The review links thinner C-MOF films to higher capacitor capacitance using the inverse relationship between dielectric thickness and capacitance.

Evidence basis: review_reasoning

Caveat: This is a device-physics rationale rather than a material-specific proof.

8999 · 4.4.2. Capacitor

Consensus SummaryHigh supportTransport Mechanism

The review attributes low conductivity in conventional MOFs to insulating ligands, weak electronic coupling between metal centres and coordination bonding that supports poor electron mobility.

Evidence basis: multi_reference

Caveat: The statement is broad background framing rather than a new analysis by the review authors.

8985 · 1. Introduction

Author InterpretationHigh supportCaveat

The review argues that films prepared at gas-liquid or liquid-liquid interfaces often require transfer, which can damage samples and increase contact resistance; liquid-solid growth is valued because it can avoid that step.

Evidence basis: review_reasoning

Caveat: The claim concerns device integration and contact engineering rather than intrinsic framework conductivity.

8991 · 2.3. Liquid-solid interface

Author InterpretationHigh supportApplication Relevance

For chemiresistive sensors, the review states that powder or thick-film C-MOF sensors hinder gas and electron transfer, making controlled nanofilm preparation essential.

Evidence basis: multi_reference

Caveat: Device performance values remain secondary summaries and should not be entered as primary sensor records.

8997 · 4.2. Chemiresistive sensors

Author InterpretationMedium supportSynthesis Strategy

Interface-assisted methods are presented as more suitable for high-quality C-MOF device films than exfoliation/recombination or high-temperature CVD because interfaces template large continuous films under milder conditions.

Evidence basis: multi_reference

Caveat: Table 1 is a review-level comparison; primary papers should be consulted before ranking fabrication routes quantitatively.

8986 · 1. Introduction · Table 1

DescriptiveMedium supportStructure Property Link

LBL-LPE liquid-solid methods are presented as a route to tune Cu-HHTP crystallographic orientation and nonlinear optical properties through solvent, concentration and temperature.

Evidence basis: single_reference

Caveat: The review reports optical coefficients from a cited study; it does not establish generality for all C-MOF families.

8992 · 2.3. Liquid-solid interface · Figure 12

Author InterpretationHigh supportCaveat

Although the review summarises many mechanistic probes, it states that C-MOF interfacial growth mechanisms remain insufficiently understood and need real-time scattering, in situ AFM and molecular simulation.

Evidence basis: review_reasoning

Caveat: The strongest mechanistic evidence includes non-conductive or model MOF films, so extension to all C-MOFs is partly inferential.

9002 · 5. Summary and outlook

DescriptiveMedium supportMeasurement Interpretation

The review interprets improved Fe-HTTP photodetector performance at low temperature as consistent with reduced thermally activated inter-band population in a narrow-bandgap film.

Evidence basis: single_reference

Caveat: The interpretation is reported from a cited study and is device-specific.

8998 · 4.3. Optoelectronic devices · Figure 21

Author InterpretationHigh supportCaveat

The review identifies scale-up as a major unresolved barrier: lab-scale films are commonly 1-10 cm2 while industrial applications require square metres of continuous film.

Evidence basis: review_reasoning

Caveat: No specific cited primary study is attached to this outlook statement.

9002 · 5. Summary and outlook

DescriptiveMedium supportStructure Property Link

For Cu-BTC SURMOF-type studies, the review states that OH-terminated and COOH-functionalised surfaces produce different growth directions, supporting substrate chemistry as a control variable.

Evidence basis: single_reference

Caveat: This is a model MOF mechanism example, not a direct conductive-film device benchmark.

8994 · 3. Investigation into the mechanisms · Figure 14

DescriptiveMedium supportTransport Mechanism

For Ni-HITP thermoelectrics, the review attributes low thermal conductivity to a porous network that scatters phonons while retaining electrical conductivity.

Evidence basis: single_reference

Caveat: The reported ZT is modest and the review itself says further optimisation is needed.

9001 · 4.4.4. Thermoelectricity · Figure 23

Secondary benchmarks

Every row remains visibly secondary and links to a primary dossier only where the mapping is verified.

Material	Property	Reported value	Context and quality	Primary evidence	Review source
SecondaryCu-HHTP 3D nanofilm	gas-sensor improvement versus 2D film	detection limit improved 1000 times; response value increased 250%; response speed increased 130%	room-temperature gas sensor on metal-oxide nanowires compared with corresponding 2D film Text · Rounded Reported	No verified corpus mapping	8997 · 4.2. Chemiresistive sensors · Figure 20
SecondaryCu-BDC	film thickness tunability	0.25-5.55 mm	spray-assisted liquid-liquid MOF synthesis; controlled by injected metal-ion precursor volume Text · Range	No verified corpus mapping	8988 · 2.1. Liquid-liquid interface · Figure 5
SecondaryCu-HHTP	LBL spray film thickness	20-100 nm	liquid-solid LBL spray self-assembly; thickness regulated by number of cycles Text · Range	research_0115	8991 · 2.3. Liquid-solid interface · Figure 11
SecondaryCu-HHTP/ITO/PET	flexible transparent supercapacitor performance	area capacitance 1700 uF cm-2; Rs 49.1 ohm sq-1; T550 nm 82.2%; 939.2 uF cm-2 at 7 uA cm-2 after 3000 cycles with 85% retention	ultrathin Cu-HHTP films on ITO/PET used for FTCEs and FTSCs Text · Exact Reported	No verified corpus mapping	8999 · 4.4.2. Capacitor · Figure 23
SecondaryCu-HTB	room-temperature electrical conductivity	1580 S cm-1	ambient temperature; liquid-liquid interface film; four-probe measurement as summarised by review Text · Exact Reported	research_0006	8987 · 2.1. Liquid-liquid interface · Figure 4
SecondaryCu-HTB	field-effect electron and hole mobility	electron mobility 116 cm2 V-1 s-1; hole mobility 99 cm2 V-1 s-1	field-effect modulation of liquid-liquid interface Cu-HTB film Text · Exact Reported	research_0006	8987 · 2.1. Liquid-liquid interface · Figure 4
SecondaryCu-HTB	transparent electrode optical transparency and conductivity	82% optical transparency; 2500 S cm-1 electrical conductivity	transparent electrodes in solar cells Text · Exact Reported	No verified corpus mapping	8999 · 4.3. Optoelectronic devices
SecondaryFe-HTTP	photodetector spectral range and response time	400-1575 nm detection; 2.3 s rise and 2.15 s fall at 77 K	double-ended photodetector; 77 K response values reported for low-temperature operation Text · Exact Reported	No verified corpus mapping	8998 · 4.3. Optoelectronic devices · Figure 21
SecondaryFe3(THT)2(NH4)3	pore dimension and interlayer distance	pore dimension roughly 1.9 nm; interlayer distance about 0.33 nm	liquid-liquid interface multilayer film; HR-TEM and PXRD as reviewed Text · Approximate	research_0001	8989 · 2.1. Liquid-liquid interface · Figure 5
SecondaryM-HHTP (M = Ni, Co)	dopamine detection limit	9.9 +/- 2 nM in PBS; 214 +/- 48 nM in simulated cerebrospinal fluid	epitaxially controlled M-HHTP films; DPASV dopamine sensing Text · Exact Reported	research_0818	8999 · 4.4.1. Electrochemical sensors · Figure 22
SecondaryNi-HITP	FET switching ratio and mobility	switching ratio 2.29 x 10^3; mobility 45.4 cm2 V-1 s-1	large-area uniform Ni-HITP thin films grown in situ at liquid-solid interface for Ni-MOF FETs Text · Exact Reported	research_0230	8997 · 4.1. Field-effect transistors · Figure 19
SecondaryNi-HITP	film area and roughness	20 um x 20 um region; average roughness 1.43 nm	gas-liquid interface self-assembled film transferred to substrate Text · Exact Reported	research_0015	8989 · 2.2. Gas-liquid interface · Figure 7
SecondaryNi-HITP	thermoelectric properties	Seebeck coefficient 11.9 uV K-1; thermal conductivity about 0.21 W m-1 K-1; ZT 1.19 x 10^-3 at room temperature	ambient/room temperature Ni-HITP film thermoelectric evaluation Text · Exact Reported	research_0072	9001 · 4.4.4. Thermoelectricity · Figure 23
SecondaryNi-HITP	vapour-assisted film thickness control	7-92 nm	alkaline vapour-induced aqueous surface film; thickness controlled by precursor amount Text · Range	No verified corpus mapping	8993 · 2.4. Steam-assisted conversion method · Figure 13
SecondaryCu-BHT	contact resistance comparison	12.96 ohm for OLGSS Cu-BHT; 170.14 ohm for traditional CVD Cu-BHT	organic-liquid-gallium surface synthesis compared with traditional CVD Caption · Exact Reported	No verified corpus mapping	8991 · 2.2. Gas-liquid interface · Figure 9
SecondaryRe-MOF thin film	CO2 reduction Faraday efficiency and current density	93.5% Faraday efficiency; current density advantage more than 2 mA cm-2	monolithic MOF thin film on conductive FTO electrode; CO2 reduction to CO Text · Exact Reported	No verified corpus mapping	9001 · 4.4.5. Catalyst · Figure 24

Research gaps

Open questions are presented as review-author priorities, not conclusions from the primary database.

Growth mechanism

High

The underlying mechanism of interfacial C-MOF film growth remains insufficiently understood.

Proposed direction: Use real-time GISAXS, in situ AFM and molecular dynamics simulations to track interface growth and ligand-metal interactions.

9002 · 5. Summary and outlook

Interdisciplinary device integration

Medium

The review calls for integration of C-MOF films with microelectrode arrays and semiconductor processes to realise graphical etching and integrated circuits.

Proposed direction: Combine flexible, biocompatible C-MOF films with semiconductor-compatible patterning and device-fabrication workflows.

9002 · 5. Summary and outlook

Large-area manufacturing

High

Laboratory C-MOF films are typically 1-10 cm2, whereas industrial applications require square metres of continuous film.

Proposed direction: Study scalable manufacturing routes for continuous, high-quality C-MOF films.

9002 · 5. Summary and outlook

Universality of interfacial methods

High

Interface-assisted methods have been shown for selected C-MOFs such as Ni-HITP and Cu-BHT, but their broader universality has not been sufficiently verified.

Proposed direction: Develop multifunctional ligands that combine solubility with interfacial self-assembly and test more complex 3D or flexible ligand topologies.

9002 · 5. Summary and outlook

Cited-study map

Mappings show which printed review references have a verified counterpart in the frozen primary corpus.

Show 26 cited-study records

Reference	Study	Role and context	Corpus mapping
Ref. 462020	Title unavailable	background_review · conductive_mof_scopeUsed by the review for general C-MOF properties and the conductivity advantages of conductive MOFs over conventional MOFs.	Unmapped
Ref. 542022	Title unavailable	method_comparisonCited where the review compares exfoliation/recombination, CVD and interface-assisted synthesis for C-MOF films.	Unmapped
Ref. 642015	Title unavailable	synthesis_example · transport_benchmarkOriginal cited study for liquid-liquid Cu-HTB film morphology, conductivity and field-effect mobility values.	research_0006
Ref. 662018	Title unavailable	synthesis_example · morphology_benchmarkCited for spray-assisted liquid-liquid MOF film formation with tunable thickness and high metal utilisation.	Unmapped
Ref. 682018	Title unavailable	synthesis_example · structure_benchmarkCited for Fe3(THT)2(NH4)3 thin film structure and charge-transport discussion.	research_0001
Ref. 712017	Title unavailable	synthesis_example · device_benchmarkCited for gas-liquid interface Ni-HITP films and FET use after transfer.	research_0015
Ref. 752024	Title unavailable	synthesis_strategy · contact_resistance_benchmarkCited for OLGSS interface strategy and lower contact resistance compared with conventional CVD.	Unmapped
Ref. 762024	Title unavailable	photocatalyst_benchmark · hybrid_filmCited for integrating molecular catalysts and perovskite photosensitisers with Cu-HHTP/cMOF ultrathin films.	Unmapped
Ref. 832017	Title unavailable	liquid_solid_growth · gas_sensor_benchmarkCited for LBL spray Cu-HHTP nanofilm thickness control and NH3 sensing performance.	research_0115
Ref. 842020	Title unavailable	liquid_solid_growth · spin_valve_benchmarkCited for LBL liquid-solid Cu-HHTP growth and for Cu-HHTP organic spin-valve performance.	research_0129
Ref. 852021	Title unavailable	liquid_solid_growth · wafer_level_filmCited for capillary-driven liquid-solid growth of two-dimensional Cu-TCPP films on dielectric substrates.	Unmapped
Ref. 862022	Title unavailable	orientation_control · optical_benchmarkCited for regulating Cu-HHTP crystal planes and nonlinear optical behaviour using LBL parameters.	research_0312
Ref. 872021	Title unavailable	steam_assisted_growth · morphology_benchmarkCited for steam/solution-solid growth of Ni-HHTP crystals and self-supported films.	research_0053
Ref. 882019	Title unavailable	vapour_assisted_growth · thickness_benchmarkCited for alkaline vapour-induced centimetre-scale free-standing Ni-HITP thin films and thickness control.	Unmapped
Ref. 942007	Title unavailable	growth_mechanism · surface_orientationCited for early cyclic immersion Cu-BTC thin-film synthesis and orientation analysis.	Unmapped
Ref. 972012	Title unavailable	growth_mechanism · qcmCited for QCM investigation of Cu-BTC film growth kinetics and surface effects.	Unmapped
Ref. 982015	Title unavailable	growth_mechanism · surface_chemistryCited for IRRAS/XRD/SEM study of surface-terminated MOF film growth.	Unmapped
Ref. 992022	Title unavailable	growth_mechanism · conductivity_vs_thicknessCited for in-plane self-limiting growth and thickness/conductivity correlations in Cu-HHTP-xC films.	research_0263
Ref. 1022019	Title unavailable	fet_benchmark · liquid_solid_growthCited for in situ grown Ni-HITP thin films used in Ni-MOF field-effect transistors.	research_0230
Ref. 1072021	Title unavailable	gas_sensor_benchmark · morphology_device_linkCited for Cu-HHTP 3D nanofilm gas sensors on nanowires and relative improvements over 2D film.	Unmapped
Ref. 1092020	Title unavailable	photodetector_benchmarkCited for Fe-HTTP thin-film photodetector spectral response and low-temperature response.	Unmapped
Ref. 1112017	Title unavailable	transparent_electrode_benchmarkCited for Cu-HTB transparent conductive electrodes in solar-cell context.	Unmapped
Ref. 1182022	Title unavailable	electrochemical_sensor_benchmarkCited for orientation-dependent M-HHTP films and dopamine detection limits.	research_0818
Ref. 1252021	Title unavailable	supercapacitor_benchmark · flexible_transparent_deviceCited for ultrathin Cu-HHTP on ITO/PET in flexible transparent conductive electrodes and supercapacitors.	Unmapped
Ref. 1312017	Title unavailable	thermoelectric_benchmarkCited for thermoelectric properties of Ni-HITP films.	research_0072
Ref. 1342016	Title unavailable	catalyst_benchmark · thin_film_deviceCited for monolithic Re-MOF thin-film electrocatalysts on FTO for CO2 reduction.	Unmapped