Electrical Transport — Conductive Hybrid Cu-HHTP-TCNQ Metal–Organic Frameworks for Chemiresistive Sensing

Measurement evidence

Electrical Transport

Conductive Hybrid Cu-HHTP-TCNQ Metal–Organic Frameworks for Chemiresistive Sensing · Luder L., Gubicza A., Stiefel M. et al. · Advanced Electronic Materials · 2022 · 2100871

2 measurement groups · 8 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Four-point collinear current-voltage transport measurement

Cu-HHTP-TCNQ film on glass chip with prepatterned gold electrodes, 45 min · Electrode

Voltage swept linearly with amplitude 3 V at 12 V s^-1; current monitored by current amplifier; nonconducting devices below 1 nS excluded.

Temperature
room temperature
Atmosphere
Vacuum for representative I-V; multiple films for conductivity statistics
Geometry
Gold-electrode glass chip; contact spacing s varied 10-100 um; contact widths b = 10 or 20 um; four-point probe
Context
Hybrid film average conductivity; not an intrinsic single-phase value because film has multiple phases and thickness variations.
Measurement source
7 · 2.6. Electrical Properties · Figure 4d-f
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Maximum contact spacings = 100 umText
Exact Reported
7 · 2.6. Electrical Properties · Figure 4a,f
Minimum contact spacings = 10 umText
Exact Reported
7 · 2.6. Electrical Properties · Figure 4a,f
Number of electrical contacts analysed206 contactsText
Exact Reported
7 · 2.6. Electrical Properties · Figure 4f
Representative film resistance in vacuum100.8 kOhmText
Exact Reported
7 · 2.6. Electrical Properties · Figure 4d
Mean conductivityMarked as a best value within this papersigma_mean = 0.033 +/- 0.006 S cm^-1+/- 0.006 S cm^-1Text
Exact Reported
7 · 2.6. Electrical Properties · Figure 4f
Highest outlier conductivity omitted from plotone outlier at sigma = 0.306 S cm^-1 (time = 60 min, s = 20 um)Caption
Exact Reported
6 · Figure 4 caption · Figure 4f
Nonconducting-device exclusion thresholdbelow threshold of 1 nSText
Exact Reported
8 · Experimental Section / Electrical Transport Measurements

Temperature-dependent four-point electrical conductivity

Cu-HHTP-TCNQ film on glass chip with prepatterned gold electrodes, 45 min · Electrode

Variable-temperature cryostat, Keithley 236 SMU, maximum current 9 nA, sweep rate 0.1 nA s^-1; temperature controlled with mK resolution.

Temperature
around room temperature
Geometry
Four-point collinear configuration
Context
Hybrid film thermally activated conductivity
Measurement source
10 · Figure S8 · Figure S8
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Activation energy for thermally activated conductivityEa = 0.142 eV from Arrhenius fit between 240 K and 300 KCaption
Exact Reported
10 · Figure S8 caption · Figure S8