DFT electronic-structure calculations
Cu-S-HHS DFT model · Model
Gaussian B3LYP/def-TZVP for molecular orbitals; CASTEP mGGA-RSCAN, cutoff 489.8 eV, SCF tolerance 2.0e-6 eV/atom, 1 x 1 x 2 k-point mesh for MOF band structures.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Cu-S-HHS DFT average effective mass | 1.03 m0 | — | — | SI Table Exact Reported | S67 · 22. Computational Study of Electronic Properties · Table S8 |
| Cu-S-HHS DFT electron effective mass | 4.2 m0 | — | — | SI Table Exact Reported | S67 · 22. Computational Study of Electronic Properties · Table S8 |
| Cu-S-HHS DFT hole effective mass | 0.59 m0 | — | — | SI Table Exact Reported | S67 · 22. Computational Study of Electronic Properties · Table S8 |
| TS-S ligand core for Cu-S-HHS HOMO level | -5.879 eV | — | — | Figure Axis Approximate | 24158 · Theoretical Calculation · Figure 6c |
| TS-S ligand core for Cu-S-HHS LUMO level | -1.639 eV | — | — | Figure Axis Approximate | 24158 · Theoretical Calculation · Figure 6c |
| Cu-S-HHS single-layer metal band | metal band crosses the Fermi level | — | — | Text Qualitative | 24159 · Theoretical Calculation · Figure 6d |