Electrical Transport — Enhanced Electrical Conductivity by the Heavy Chalcogen Effect in Metal-Organic Frameworks

13 measurement groups · 41 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

four-probe pressed-pellet conductivity

Electrical conductivity

Cu-S-HHS pressed pellet · Pellet

20 mg MOF powder pressed in 8 mm die for 5 min at 20 MPa; four-point linear probe spacing 1.2 mm; variable T 80-350 K.

Temperature: 298
Context: pristine framework sample
Measurement source: S49-S50 · 17. Electrical Conductivity Measurement · Figures S50-S52

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
S: 200-350 K Arrhenius	297 meV	—	—	Text Exact Reported	24157 · Electronic Properties · Figure 5b
Cu-S-HHS room-temperature pressed-pellet conductivity	(2.48 ± 0.63) × 10-4 S cm-1	—	±0.63×10-4 S cm-1	Text Exact Reported	24157 · Electronic Properties · Figure 5b / Figures S50-S52

Hall effect measurement

Hall-effect measurements

Cu-S-HHS pressed pellet · Pellet

Pressed rectangular pellet, 15 mg powder, 3 mm x 6 mm die, 3 MPa for 30 min; silver-paste Hall contacts; PPMS DynaCool, vertical field ±6 T.

Temperature: 300
Context: pristine framework sample
Measurement source: S55-S56 · 20. Hall Effect Measurements · Figures S59-S60

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu-S-HHS carrier concentration	1.67e+22 m-3	—	—	Text Exact Reported	S56 · 20. Hall Effect Measurements · Figure S60
Cu-S-HHS majority carrier type	n-type	—	—	Text Qualitative	S56 · 20. Hall Effect Measurements · Figure S60
Cu-S-HHS Hall coefficient	-0.000373 m3/C	—	—	Text Exact Reported	S56 · 20. Hall Effect Measurements · Figure S60
Cu-S-HHS Hall mobility	0.092 ±0.010 cm2 V-1 s-1	—	±0.010 cm2 V-1 s-1	Text Exact Reported	S56 · 20. Hall Effect Measurements · Figure S60

optical-pump terahertz-probe spectroscopy and Drude-Smith fitting

Terahertz spectroscopy

Cu-S-HHS interfacial film · Thin Film

Film on quartz, 400 nm pump from BBO; pump fluence 600 uJ/cm2 for dynamics; 0-3 THz probe; frequency-resolved photoconductivity at 290 K.

Temperature: 290
Context: pristine framework sample
Measurement source: S57-S61 · 21. OPTP Spectroscopy Measurement · Figures S62-S65 / Table S7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu-S-HHS Drude-Smith backscattering coefficient c	-0.78	—	—	Text Exact Reported	S61 · 21.2. Experimental Details of OPTP · Figures S63-S65
Cu-S-HHS Drude-Smith scattering time tau	81 fs	—	—	Text Exact Reported	S61 · 21.2. Experimental Details of OPTP · Figures S63-S65
Cu-S-HHS OPTP average lifetime	2.55 ps	—	—	SI Table Exact Reported	S59 · 21.2. Experimental Details of OPTP · Table S7
Cu-S-HHS THz mobility	31 ±3 cm2 V-1 s-1	—	±3 cm2 V-1 s-1	Text Exact Reported	S61 · 21.2. Experimental Details of OPTP · Figures S63-S65

two-/four-electrode single-crystal I-V conductivity

Electrical conductivity

Cu-S-HHS plate device · Single Crystal

Drop-cast rods or Cu-S-HHS plates on Si/SiO2, PMMA/EBL patterning, Ti/Au contacts; resistance used when voltage drop unavailable.

Temperature: 298
Context: pristine framework sample
Measurement source: S51-S53 · 18. Device Fabrication and Characterization · Figures S55-S56 / Table S6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu-S-HHS single-crystal in-plane conductivity	1.32×10-3 S cm-1	—	—	SI Table Exact Reported	S53 · 18. Device Fabrication and Characterization · Table S6

two-/four-electrode single-crystal I-V conductivity

Electrical conductivity

Cu-S-HHS rod device · Single Crystal

Drop-cast rods or Cu-S-HHS plates on Si/SiO2, PMMA/EBL patterning, Ti/Au contacts; resistance used when voltage drop unavailable.

Temperature: 298
Context: pristine framework sample
Measurement source: S51-S53 · 18. Device Fabrication and Characterization · Figures S55-S56 / Table S6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu-S-HHS single-crystal out-of-plane conductivity	1.99×10-4 S cm-1	—	—	SI Table Exact Reported	S53 · 18. Device Fabrication and Characterization · Table S6

four-probe pressed-pellet conductivity

Electrical conductivity

Cu-Se-HHS pressed pellet · Pellet

20 mg MOF powder pressed in 8 mm die for 5 min at 20 MPa; four-point linear probe spacing 1.2 mm; variable T 80-350 K.

Temperature: 298
Context: pristine framework sample
Measurement source: S49-S50 · 17. Electrical Conductivity Measurement · Figures S50-S52

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Se: middle-temperature Arrhenius region	189 meV	—	—	Figure Axis Approximate	24156 · Electronic Properties · Figure 5b
Se: 300-350 K Arrhenius region	394 meV	—	—	Text Exact Reported	24157 · Electronic Properties · Figure 5b
Se: 100-200 K Arrhenius region	99 meV	—	—	Text Exact Reported	24157 · Electronic Properties · Figure 5b
Cu-Se-HHS room-temperature pressed-pellet conductivity	(4.17 ± 2.04) × 10-2 S cm-1	—	±2.04×10-2 S cm-1	Text Exact Reported	24157 · Electronic Properties · Figure 5b / Figures S50-S52
Cu-Se-HHS low-temperature transport model	fits 3D Mott variable-range hopping at low temperature	—	—	Text Qualitative	24157 · Electronic Properties · Figure S53

Hall effect measurement

Hall-effect measurements

Cu-Se-HHS pressed pellet · Pellet

Pressed rectangular pellet, 15 mg powder, 3 mm x 6 mm die, 3 MPa for 30 min; silver-paste Hall contacts; PPMS DynaCool, vertical field ±6 T.

Temperature: 300
Context: pristine framework sample
Measurement source: S55-S56 · 20. Hall Effect Measurements · Figures S59-S60

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu-Se-HHS carrier concentration	1.07e+24 m-3	—	—	Text Exact Reported	S56 · 20. Hall Effect Measurements · Figure S60
Cu-Se-HHS majority carrier type	n-type	—	—	Text Qualitative	S56 · 20. Hall Effect Measurements · Figure S60
Cu-Se-HHS Hall coefficient	-5.84e-06 m3/C	—	—	Text Exact Reported	S56 · 20. Hall Effect Measurements · Figure S60
Cu-Se-HHS Hall mobility	0.236 ±0.004 cm2 V-1 s-1	—	±0.004 cm2 V-1 s-1	Text Exact Reported	S56 · 20. Hall Effect Measurements · Figure S60

optical-pump terahertz-probe spectroscopy and Drude-Smith fitting

Terahertz spectroscopy

Cu-Se-HHS interfacial film · Thin Film

Film on quartz, 400 nm pump from BBO; pump fluence 600 uJ/cm2 for dynamics; 0-3 THz probe; frequency-resolved photoconductivity at 290 K.

Temperature: 290
Context: pristine framework sample
Measurement source: S57-S61 · 21. OPTP Spectroscopy Measurement · Figures S62-S65 / Table S7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu-Se-HHS Drude-Smith backscattering coefficient c	-0.69	—	—	Text Exact Reported	S61 · 21.2. Experimental Details of OPTP · Figures S63-S65
Cu-Se-HHS Drude-Smith scattering time tau	90 fs	—	—	Text Exact Reported	S61 · 21.2. Experimental Details of OPTP · Figures S63-S65
Cu-Se-HHS OPTP average lifetime	3.06 ps	—	—	SI Table Exact Reported	S59 · 21.2. Experimental Details of OPTP · Table S7
Cu-Se-HHS THz mobilityMarked as a best value within this paper	79 ±8 cm2 V-1 s-1	—	±8 cm2 V-1 s-1	Text Exact Reported	S61 · 21.2. Experimental Details of OPTP · Figures S63-S65

two-/four-electrode single-crystal I-V conductivity

Electrical conductivity

Cu-Se-HHS rod device · Single Crystal

Drop-cast rods or Cu-S-HHS plates on Si/SiO2, PMMA/EBL patterning, Ti/Au contacts; resistance used when voltage drop unavailable.

Temperature: 298
Context: pristine framework sample
Measurement source: S51-S53 · 18. Device Fabrication and Characterization · Figures S55-S56 / Table S6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu-Se-HHS single-crystal out-of-plane conductivity	3.39×10-4 S cm-1	—	—	SI Table Exact Reported	S53 · 18. Device Fabrication and Characterization · Table S6

four-probe pressed-pellet conductivity

Electrical conductivity

Cu-Te-HHS pressed pellet · Pellet

20 mg MOF powder pressed in 8 mm die for 5 min at 20 MPa; four-point linear probe spacing 1.2 mm; variable T 80-350 K.

Temperature: 298
Context: pristine framework sample
Measurement source: S49-S50 · 17. Electrical Conductivity Measurement · Figures S50-S52

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Te: 280-350 K Arrhenius region	172 meV	—	—	Text Exact Reported	24157 · Electronic Properties · Figure 5b
Te: 80-150 K Arrhenius region	47 meV	—	—	Text Exact Reported	24157 · Electronic Properties · Figure 5b
Te: 150-280 K Arrhenius region	78 meV	—	—	Text Exact Reported	24157 · Electronic Properties · Figure 5b
Cu-Te-HHS room-temperature pressed-pellet conductivityMarked as a best value within this paper	3.21 ± 1.06 S cm-1	—	±1.06 S cm-1	Text Exact Reported	24157 · Electronic Properties · Figure 5b / Figures S50-S52
Cu-Te-HHS low-temperature transport model	fits 3D Mott variable-range hopping at low temperature	—	—	Text Qualitative	24157 · Electronic Properties · Figure S53

Hall effect measurement

Hall-effect measurements

Cu-Te-HHS pressed pellet · Pellet

Pressed rectangular pellet, 15 mg powder, 3 mm x 6 mm die, 3 MPa for 30 min; silver-paste Hall contacts; PPMS DynaCool, vertical field ±6 T.

Temperature: 300
Context: pristine framework sample
Measurement source: S55-S56 · 20. Hall Effect Measurements · Figures S59-S60

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu-Te-HHS carrier concentration	7.36e+24 m-3	—	—	Text Exact Reported	S56 · 20. Hall Effect Measurements · Figure S60
Cu-Te-HHS majority carrier type	p-type	—	—	Text Qualitative	S56 · 20. Hall Effect Measurements · Figure S60
Cu-Te-HHS Hall coefficient	8.48e-07 m3/C	—	—	Text Exact Reported	S56 · 20. Hall Effect Measurements · Figure S60
Cu-Te-HHS Hall mobilityMarked as a best value within this paper	2.723 ±0.173 cm2 V-1 s-1	—	±0.173 cm2 V-1 s-1	Text Exact Reported	S56 · 20. Hall Effect Measurements · Figure S60

optical-pump terahertz-probe spectroscopy and Drude-Smith fitting

Terahertz spectroscopy

Cu-Te-HHS interfacial film · Thin Film

Film on quartz, 400 nm pump from BBO; pump fluence 600 uJ/cm2 for dynamics; 0-3 THz probe; frequency-resolved photoconductivity at 290 K.

Temperature: 290
Context: pristine framework sample
Measurement source: S57-S61 · 21. OPTP Spectroscopy Measurement · Figures S62-S65 / Table S7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu-Te-HHS Drude-Smith backscattering coefficient c	-0.65	—	—	Text Exact Reported	S61 · 21.2. Experimental Details of OPTP · Figures S63-S65
Cu-Te-HHS Drude-Smith scattering time tau	81 fs	—	—	Text Exact Reported	S61 · 21.2. Experimental Details of OPTP · Figures S63-S65
Cu-Te-HHS OPTP average lifetime	3.46 ps	—	—	SI Table Exact Reported	S59 · 21.2. Experimental Details of OPTP · Table S7
Cu-Te-HHS low-temperature photoconductivity increase	nearly 170% increase from 350 to 80 K	—	—	Text Approximate	24158 · THz Photoconductivity · Figure S66
Cu-Te-HHS THz mobility	65 ±7 cm2 V-1 s-1	—	±7 cm2 V-1 s-1	Text Exact Reported	S61 · 21.2. Experimental Details of OPTP · Figures S63-S65

two-/four-electrode single-crystal I-V conductivity

Electrical conductivity

Cu-Te-HHS rod device · Single Crystal

Drop-cast rods or Cu-S-HHS plates on Si/SiO2, PMMA/EBL patterning, Ti/Au contacts; resistance used when voltage drop unavailable.

Temperature: 298
Context: pristine framework sample
Measurement source: S51-S53 · 18. Device Fabrication and Characterization · Figures S55-S56 / Table S6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu-Te-HHS single-crystal out-of-plane conductivity	4.33×10-2 S cm-1	—	—	SI Table Exact Reported	S53 · 18. Device Fabrication and Characterization · Table S6