Four-probe I-V and temperature-dependent conductivity
~100 nm Cu3(HHTP)2 four-probe device on silica · Thin Film
I-V curves recorded under vacuum (~10^-5 mbar) over 100-300 K; conductivity calculated as sigma = (I/V)*(L/Wd).
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| in-plane conductivity near 100 K | ~0.0035 S cm-1 | — | — | Visual Estimate Approximate | main p.5, article p.25574 · Results and Discussion · Fig. 5c |
| in-plane conductivity at 300 KMarked as a best value within this paper | 0.031 S cm-1 | — | — | Text Exact Reported | main p.5, article p.25574 · Results and Discussion · Fig. 5c |
| Au contact length | 9000 um | — | — | Text Exact Reported | main p.5, article p.25574 · Results and Discussion · Fig. 5b; Fig. S25 |
| Au contact spacing | 100 um | — | — | Text Exact Reported | main p.5, article p.25574 · Results and Discussion · Fig. 5b; Fig. S25 |
| Au contact thickness | 40 nm | — | — | Text Exact Reported | main p.5, article p.25574 · Results and Discussion · Fig. 5b; Fig. S25 |
| Au contact width | 100 um | — | — | Text Exact Reported | main p.5, article p.25574 · Results and Discussion · Fig. 5b; Fig. S25 |
| device MOF film thickness | ~100 nm | — | — | Text Approximate | main p.5, article p.25574 · Results and Discussion · Fig. 5b; Fig. S25 |
| I-V linearity / ohmic contact | linear current-voltage curves in 100-300 K range | — | — | Text Qualitative | main p.5, article p.25574 · Results and Discussion · Fig. 5b; Fig. S25d |
| temperature dependence of conductivity | conductivity increased with temperature; semiconducting nature | — | — | Text Qualitative | main p.6, article p.25575 · Results and Discussion · Fig. 5c |